USE PROSPECTS IN MICROELECTRONICS FOR POLYCRYSTALLINE SILICON FILM STRUCTURES WITH p–n JUNCTION

The paper discusses perspectives of elaborating microelectronic and optoelectronic devices on polycrystalline silicon films. The I-V features of structures with p-n-junction, formed by using methods of р-type conductivity layer grow, thermal diffusion and ion-implantation of boron atoms into n-type polycrystalline silicon layer are compared. The I-V feature with S-form curve of the investigated structures conditioned by changing of the conductivities of base and grain boundaries under thermal processing are revealed.


Variant title:
ПЕРСПЕКТИВЫ ИСПОЛЬЗОВАНИЯ В МИКРОЭЛЕКТРОНИКЕ ПЛЕНОЧНЫХ СТРУКТУР С P–N-ПЕРЕХОДОМ НА ПОЛИКРИСТАЛЛИЧЕСКОЙ КРЕМНИЕВОЙ ОСНОВЕ
Issue Date:
Oct 15 2009
Publication Type:
Journal Article
DOI and Other Identifiers:
ISSN 1804-0519 (Print) ISSN 1804-0527 (Online) (Other)
PURL Identifier:
http://purl.umn.edu/94559
Published in:
Perspectives of Innovations, Economics, and Business
Volume 02
Page range:
106-109
Total Pages:
4




 Record created 2017-04-01, last modified 2017-08-25

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